VN750 datasheet(9/46 Pages) STMICROELECTRONICS

9 / 46 page

VN750

Electrical specifications

Doc ID 6942 Rev. 4

9/46

2.2

Thermal data

Symbol

Parameter

Value

Unit

SO-8

PENTAWATT

P2PAK

PPAK

EMAX

Maximum switching energy

(L = 1.8 mH; RL =0 Ω;

Vbat = 13.5 V; Tjstart =150°C;

IL =9 A)

100

EMAX

Maximum switching energy

(L = 2.46 mH; RL =0 Ω;

Vbat = 13.5 V; Tjstart =150°C;

IL =9 A)

138

Ptot

Power dissipation TC = 25°C

4.2

Junction operating temperature

Internally limited

°C

Case operating temperature

-40 to 150

°C

Tstg

Storage temperature

-55 to 150

°C

Table 3.

Absolute maximum ratings (continued)

Table 4.

Thermal data

Symbol

Parameter

Max. value

Unit

S0-8

PENTAWATT P2PAK

PPAK

Rthj-case Thermal resistance junction-case

2.1

°C/W

Rthj-lead Thermal resistance junction-lead

°C/W

Rthj-amb Thermal resistance junction-ambient

93(1)

When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected

to all VCC pins. Horizontal mounting and no artificial air flow.

62.1

52.1(2)

When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick). Horizontal

mounting and no artificial air flow.

77.1(2)

°C/W

82(3)

When mounted on a standard single-sided FR-4 board with 2 cm2 of Cu (at least 35 µm thick) connected to

all VCC pins. Horizontal mounting and no artificial air flow.

62.1

37(4)

When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35 µm thick). Horizontal

mounting and no artificial air flow.

44(4)

°C/W

Obsolete

Product(s)

- Obsolete

Product(s)

VN750 Datenblatt(PDF) 9 Page - STMicroelectronics

VN750 Datenblatt(HTML) 9 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46

Datenblatt Download

Link URL