ISO7640FM, ISO7641FM

SLLSE89G – SEPTEMBER 2011 – REVISED JANUARY 2015

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6 Specifications

6.1 Absolute Maximum Ratings

(1)

MIN

MAX

UNIT

Supply voltage(2)

VCC1, VCC2

–0.5

6

V

Voltage

INx, OUTx, ENx

–0.5

VCC + 0.5

(3)

V

Output Current, IO

–15

15

mA

Maximum junction temperature, TJ

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak

voltage values.

(3)

Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±4000

Charged device model (CDM), per JEDEC specification JESD22-C101,

V(ESD)

Electrostatic discharge

±1500

V

all pins(2)

Machine model, per JEDEC JESD22-A115-A

±200

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VCC1, VCC2

Supply voltage

2.7

5.5

V

IOH

High-level output current

–4

mA

IOL

Low-level output current

4

mA

VIH

High-level input voltage

2

5.5

V

VIL

Low-level input voltage

0

0.8

V

≥3-V Operation

6.67

tui

Input pulse duration

ns

<3-V Operation

10

≥3-V Operation

0

150

1 / tui

Signaling rate

Mbps

<3-V Operation

0

100

TJ

Junction temperature

–40

136

°C

TA

Ambient temperature

–40

25

125

°C

6.4 Thermal Information

ISO76xx

THERMAL METRIC(1)

DW (SOIC)

UNIT

16 PINS

RθJA

Junction-to-ambient thermal resistance

72

RθJC(top)

Junction-to-case(top) thermal resistance

38

°C/W

RθJB

Junction-to-board thermal resistance

39

ψJT

Junction-to-top characterization parameter

9.4

VCC1 = VCC2 = 5.5V, TJ = 150°C, CL = 15 pF

PD

Maximum Device Power Dissipation

399

mW

Input a 75-MHz 50% duty cycle square wave

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6

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