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INA128P Datenblatt(PDF) 5 Page - Texas Instruments

Teilenummer INA128P
Bauteilbeschribung  INA12x Precision, Low-Power Instrumentation Amplifiers
PDF  35 Pages
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Hersteller  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
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INA128P Datenblatt(HTML) 5 Page - Texas Instruments

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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VS
Supply voltage
Dual supply, VS = (V+) – (V–)
±18
V
Single supply, VS = (V+) – 0 V
36
Analog input voltage
±40
V
Output short-circuit(2)
Continuous
TA
Operating temperature
–40
125
°C
Junction temperature
150
°C
Lead temperature (soldering, 10 s)
300
°C
Tstg
Storage temperature
–55
125
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2)
Short-circuit to VS / 2.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±50
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
TYP
MAX
UNIT
VS
Supply voltage
Single-supply
4.5
30
36
V
Dual-supply
±2.25
±15
±18
Input common-mode voltage range for VO = 0 V
(V–) + 2
(V+) – 2
V
TA
Specified temperature
–40
85
°C
7.4 Thermal Information
THERMAL METRIC(1)
INA12x
UNIT
D (SOIC)
P (PDIP)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
110
46.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
57
34.1
°C/W
RθJB
Junction-to-board thermal resistance
54
23.4
°C/W
ψJT
Junction-to-top characterization parameter
11
11.3
°C/W
ψJB
Junction-to-board characterization parameter
53
23.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
www.ti.com
INA128, INA129
SBOS051F – OCTOBER 1995 – REVISED MAY 2022
Copyright © 2022 Texas Instruments Incorporated
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Product Folder Links: INA128 INA129



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