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STPS1L30U Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STPS1L30U
Bauteilbeschribung  30 V, 1 A low drop power Schottky rectifier
PDF  15 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STPS1L30U Datenblatt(HTML) 2 Page - STMicroelectronics

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1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS) Forward rms current
10
A
IF(AV)
Average forward current, δ = 0.5, square wave
SMA
TL = 135 °C
1
A
SMA Flat Notch
TL = 140 °C
SMB
TL = 140 °C
IFSM
Surge non repetitive forward current
SMA
tp = 10 ms sinusoidal
75
A
SMA Flat Notch
90
SMB
75
PARM
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
110
W
Tstg
Storage temperature range
-65 to +150
°C
Tj
Maximum operating junction temperature(1)
+150
°C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter
Max. value
Unit
Rth(j-l)
Junction to lead
SMA
30
°C/W
SMA Flat Notch
20
SMB
25
For more information, please refer to the following application note :
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
200
µA
Tj = 100 °C
-
6
15
mA
VF(1)
Forward voltage drop
Tj = 25 °C
IF = 1 A
-
0.395
V
Tj = 125 °C
-
0.260
0.300
Tj = 25 °C
IF = 2 A
-
0.445
Tj = 125 °C
-
0.325
0.375
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.225x IF(AV) + 0.075 x IF2(RMS)
STPS1L30
Characteristics
DS1243 - Rev 8
page 2/15



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