| Datenblatt-Suchmaschine für elektronische Bauteile |
|
STPS8L30DEE Datenblatt(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STPS8L30DEE Datenblatt(HTML) 3 Page - STMicroelectronics |
|
3 / 9 page ![]() 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current PF(AV)(W) 0 1 2 3 4 5 6 0 2 4 6 8 10 12 IF(AV)(A) T tp δ =tp/T δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 Figure 2. Average forward current versus ambient temperature(δ = 0.5) 0 2 4 6 8 10 0 25 50 75 100 125 150 IF(AV)(A) Tamb(°C) T δ =tp/T tp Rth(j-a) =Rth(j-c) Figure 3. Normalized avalanche power derating versus pulse duration P (10 µs) ARM P ( p t ) ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs) p Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c) /Rth(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 E-05 1. E-04 1. 1.E-03 1.E-02 1.E-01 1.E+00 tp(s) Single pulse Figure 5. Reverse leakage current versus reverse voltage applied (typical values) 1.E-02 1.E-01 1.E+00 1.E+01 E+02 1. 1.E+03 0 5 10 15 20 25 30 IR(mA) VR(V) Tj = 150 °C Tj = 125 °C Tj = 75 °C Tj = 50 °C Tj = 100 °C Tj = 25 °C Figure 6. Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 1000 10000 1 10 100 VR(V) F=1 MHz VOSC=30 mVRMS Tj=25 °C STPS8L30DEE Characteristics (curves) DS9066 - Rev 2 page 3/9 |
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |