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STPS20L45CT Datenblatt(PDF) 3 Page - STMicroelectronics |
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STPS20L45CT Datenblatt(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STPS20L45C Characteristics DocID8001 Rev 5 3/15 Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 0.2 mA Tj = 125 °C - 65 130 VF(1) Forward voltage drop Tj = 25 °C IF = 10 A - 0.55 V Tj = 125 °C 0.44 0.5 Tj = 25 °C IF = 20 A - 0.73 Tj = 125 °C - 0.62 0.72 Notes: (1)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.28 x IF(AV) + 0.022 x IF2(RMS) |
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