L99LD01 datasheet(48/69 Pages) STMICROELECTRONICS

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Electrical characteristics

L99LD01

48/69

DocID025319 Rev 3

Table 19. NRES and LMODE pin characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VCC1_TH

Reset intervention threshold

4.6

4.7

4.8

TRR

VCC1 reset filtering time

VCC1 <VCC1_TH

µs

tFS

VCC1 reset time-out for fail safe

detection

VS ≥ VSMIN;

VCC1 <VCC1_TH; t ≥ tFS

1.6

2.9

TRD

Reset delay time

VCC1 ≥ VCC1_TH

1.6

2.9

INRES

High state reset sink current

VNRES =VS; NRES active

0.5

1.7

3.5

INRES

High state reset leakage current

VNRES =VS; NRES

inactive

300

μA

VNRES_L

Reset I/O low state level

VCC1 ≤ VCC1_TH;

INRES =1 mA

0.5

VLMODE_H

Led mode switch high state input

VLMODE_L

Led mode switch low state input

-ILMODE

Internal pull up current source

VLMODE = 0

µA

Table 20. G1 driver 1 pin characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VG1_H

Gate1 high level

VCC2

VG1_L

Gate1 low level

0.5

tr_G1

Gate1 charging rise time

CG = 4.7 nF; VGS1 rising from

10 % to 90 %; VS ≥ 10 V

tf_G1

Gate1 discharging fall time

CG = 4.7 nF; VGS1 falling from

90 % to 10 %; VS ≥ 10 V

Table 21. G2 pin characteristics (driver2)

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VG2_H

High state output

VG2 voltage

PWM_L = High;

V(ISENSE+)=30 V

V(ISENSE+) +10

V(ISENSE+) +14

VG2_L

Low state output

voltage VG2

PWM_L = Low;

V(ISENSE+)=30 V

0.05

-IG2_H

Gate 2 high state

output current

PWM_L = High;

VGS_M2 =6 V

(1); C

GS_M2 =1 nF;

V(ISENSE+)=30 V

200

µA

IG2_L

Gate 2 low state

output current

PWM_L = Low; VGS_M2 =6 V

(2);

CGS_M2 =1 nF;

V(ISENSE+)=30 V

200

µA

IG2_H current is measured when the voltage across gate and source of Mosfet M2 (VGS_M2) reaches a value of 6 V during

its rising transient.

IG2_L current is measured when the voltage across gate and source of Mosfet M2 (VGS_M2) reaches a value of 6 V during

its falling transient.

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