IS61C64AL

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

2

09/09/2024

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-10

-12

Symbol

Parameter

TestConditions

Min.

Max.

Min.

Max.

Unit

ICC1

VDDOperating

VDD= Max.,

CE=VIL

Com.

—

20

—

20

mA

SupplyCurrent

IOUT = 0 mA, f = 0

Ind.

—

25

—

25

ICC2

VDDDynamicOperating

VDD= Max.,

CE=VIL

Com.

—

45

—

35

mA

SupplyCurrent

IOUT = 0 mA, f = fMAX

Ind.

—

50

—

45

typ.(2)

25

25

ISB1

TTLStandbyCurrent

VDD=Max.,

Com.

—

1

—

1

mA

(TTLInputs)

VIN =VIH orVIL

Ind.

—

2

—

2

CE

≥VIH,f=0

ISB2

CMOSStandby

VDD=Max.,

Com.

—

350

—

350

µA

Current(CMOSInputs)

CE

≥VDD–0.2V,

Ind.

—

450

—

450

VIN

≥VDD–0.2V,or

typ.(2)

200

200

VIN

≤ 0.2V, f = 0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 5V, TA = 25oC. Not 100% tested.

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Output Capacitance

VOUT = 0V

10

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

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