STPS40170C datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

IR(µA)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

10 20 30 40 50 60 70 80

Tj = 75 °C

Tj = 100 °C

Tj = 125 °C

Tj = 150 °C

Tj = 50 °C

Tj = 25 °C

VR(V)

100 110 120 130 140 150 160 170

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

C(pF)

100

1000

100

1000

VR(V)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

Figure 7. Forward voltage drop versus forward current

(per diode)

IF(A)

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

Tj = 125 °C

(typical values)

Tj = 125 °C

(maximum values)

Tj = 25 °C

(maximum values)

VF(V)

Figure 8. Thermal resistance junction to ambient versus

copper surface under tab

Rth(j-a) (°C/W)

D²PAK

Epoxy printed board FR4, copper thickness = 35 µm

SCu(cm²)

STPS40170C

Characteristics (curves)

DS4412 - Rev 2

page 4/15

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