1.1

Characteristics (curves)

Figure 4. Average forward current versus case

temperature (δ = 0.8)

0

20

40

60

80

100

0

25

50

75

100

125

150

175

IF(AV)(A)

Tc(°C)

Figure 5. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-5

1.E-4

1.E-3

1.E-2

1.E-1

Zth(j-c)/Rth(j-c)

tp(s)

Single pulse

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values)

1.E+0

1.E+1

1.E+2

1.E+3

1.E+4

1.E+5

0

10

20

30

40

50

60

70

80

90

100

IR(µA)

VR(V)

Tj=25 °C

Tj=100 °C

Tj=150 °C

Tj=75 °C

Tj=50 °C

Tj=125 °C

Figure 7. Junction capacitance versus reverse voltage

applied (typical values)

0.1

1.0

10.0

100.0

0.1

1.0

10.0

100.0

Cj (nF)

VR(V)

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

Figure 8. Forward voltage drop versus forward current (typical values)

0.1

1.0

10.0

100.0

1000.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

IF(A)

VF(V)

Tj=125°C

Tj=75°C

Tj=150°C

Tj=-40°C

Tj=25°C

STPST80H100-Y

Characteristics

DS14555 - Rev 2

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