Characteristics

STTH8R02D-Y

2/10

DocID029557 Rev 2

1

Characteristics

Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse

voltage

Tj = -40 °C to +175 °C

200

V

IF(AV)

Average forward current

Tc

= 150 °C , δ = 0.5 square pulse

4

A

IF(RMS)

Forward rms current

10

A

IFSM

Surge non repetitive forward

current

tp = 8.3 ms sinusoidal

75

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

-40 to +175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal resistance parameters

Symbol

Parameter

Maximum

Unit

Rth(j-c)

Junction to case

Per diode

5

°C/W

Total

3

Coupling

1

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

3

µA

Tj = 125 °C

-

2

20

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 3 A

-

0.90

1.05

V

Tj = 125 °C

-

0.87

Tj = 150 °C

-

0.71

0.83

Tj = 25 °C

IF = 4 A

-

0.94

1.10

Tj = 125 °C

-

0.92

Tj = 150 °C

-

0.76

0.88

Tj = 25 °C

IF = 8 A

-

1.05

1.22

Tj = 125 °C

-

1.07

Tj = 150 °C

-

0.89

1.04

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.72 x IF(AV) + 0.040 x IF2(RMS)