STTH8003 datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STTH8003CY

3/5

P(W)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

IF(av) (A)

δ=tp/T

Fig. 1: Conduction losses versus average current

(per diode)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

100

200

VFM(V)

IFM(A)

Tj=125°C

Typical values

Tj=125°C

Maximum values

Tj=25°C

Maximum values

Fig. 2: Forward voltage drop versus forward

current (per diode)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration

100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IRM(A)

VR=200V

Tj=125°C

IF=2 x IF(av)

IF=IF(av)

IF=0.5 x IF(av)

Fig. 4: Peak reverse recovery current versus

dIF/dt (90% confidence, per diode)

100 150 200 250 300 350 400 450 500

0.0

0.1

0.2

0.3

0.4

0.5

0.6

dIF/dt(A/µs)

S factor

VR=200V

Tj=125°C

Fig. 6: Softness factor (tb/ta) versus dIF/dt

(typical values, per diode)

100 150 200 250 300 350 400 450 500

100

120

140

160

180

dIF/dt(A/µs)

trr(ns)

VR=200V

Tj=125°C

IF=2 x IF(av)

IF=IF(av)

IF=0.5 x IF(av)

Fig. 5: Reverse recovery time versus dIF/dt

(90% confidence, per diode)

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