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TN2540-12G Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer TN2540-12G
Bauteilbeschribung  isc Thyristors
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TN2540-12G Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

  TN2540-12G Datasheet HTML 1Page - Inchange Semiconductor Company Limited TN2540-12G Datasheet HTML 2Page - Inchange Semiconductor Company Limited TN2540-12G Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc Thyristors
TN2540-12G
www.iscsemi.com
1
FEATURES
· Max. Blocking Voltage= VDRM, VRRM= 1200 V
· IGT Maximum = 40 mA
· Available in SMD D2PAK with Anode in Backside
APPLICATIONS
· Wind Renewable Energy Inverters
· Battery Charge
· Uninterruptible Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive Peak Off-state Voltage
1200
V
VRRM
Repetitive Peak Off-state Voltage
1200
V
IT(RMS)
Non Repetitive Surge Peak On-state Current (180° Conduction Angle, Tc= 102℃)
25
A
IT(AV)
Average on-state current (180° Conduction Angle, Tc= 102℃)
16
A
ITSM
Non-repetitive Peak On-state Current, 1 full cycle
tp= 8.3ms
314
A
tp= 10ms
300
A
I2t
I2t Value for Fusing, tp= 10ms
450
A2S
PG(AV)
Average Gate Power Dissipation
1
W
di/dt
Repetitive Rate of Rise of On-state Current after Triggering (f= 60Hz)
50
A/us
IGM
Peak Gate Current, tp= 20us
4
A
TJ
Operating Junction Temperature
-40~+125
℃
Tstg
Storage Temperature
-40~+150
℃


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