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IRF540 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer IRF540
Bauteilbeschribung  N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET
PDF  6 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRF540 Datenblatt(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on Time
Rise Time
VDD =50 V
ID =15 A
RG =4.7
Ω
VGS =10 V
20
60
28
85
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80 V
ID =30 A VGS =10 V
80
13
28
110
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =80 V
ID =30 A
RG =4.7
Ω VGS =10 V
22
25
55
30
35
75
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
30
120
A
A
VSD (
∗)
Forward On Voltage
ISD =50 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =30 A
di/dt = 100 A/
µs
VDD =30 V
Tj =150
oC
175
1.1
12. 5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
IRF540/IRF540FI
3/6



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