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EN25F80-100VIP Datenblatt(PDF) 13 Page - Eon Silicon Solution Inc.

Teilenummer EN25F80-100VIP
Bauteilbeschribung  8 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
PDF  32 Pages
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Hersteller  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN25F80-100VIP Datenblatt(HTML) 13 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
13
EN25F80
Rev. E, Issue Date: 2007/11/23
Read Data Bytes at Higher Speed (FAST_READ) (0Bh)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the rising edge of Serial Clock (CLK). Then the
memory contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted
out, at a maximum frequency FR, during the falling edge of Serial Clock (CLK).
The instruction sequence is shown in Figure 10. The first byte addressed can be at any location.
The address is automatically incremented to the next higher address after each byte of data is shift-
ed out. The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip
Select (CS#) High. Chip Select (CS#) can be driven High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 10. Fast Read Instruction Sequence Diagram
Page Program (PP) (02h)
The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least
significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the same page (from the address whose 8



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