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L6571AD Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer L6571AD
Bauteilbeschribung  HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR
PDF  7 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6571AD Datenblatt(HTML) 2 Page - STMicroelectronics

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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IS
(*)
Supply Current
25
mA
VCF
Oscillator Resistor Voltage
18
V
VLVG
Low Side Switch Gate Output
14.6
V
VOUT
High Side Switch Source Output
-1 to VBOOT -18
V
VHVG
High Side Switch Gate Output
-1 to VBOOT
V
VBOOT
Floating Supply Voltage
618
V
VBOOT/OUT
Floating Supply vs OUT Voltage
18
V
dVBOOT/dt
VBOOT Slew Rate (Repetitive)
± 50
V/ns
dVOUT/dt
VOUT Slew Rate (Repetitive)
± 50
V/ns
Tstg
Storage Temperature
-40 to 150
°C
Tj
Junction Temperature
-40 to 150
°C
Tamb
Ambient Temperature (Operative)
-40 to 125
°C
(*)
The device has an internal zener clamp between GND and VS (typical 15.6V).
Therefore the circuit should not be driven by a DC low impedance power source.
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
VS
RF
CF
GND
1
3
2
4
LVG
OUT
HVG
BOOT
8
7
6
5
D94IN059
PIN CONNECTION
THERMAL DATA
Symbol
Parameter
Minidip
SO8
Unit
Rth j-amb
Thermal Resistance Junction-Ambient
Max
100
150
°C/W
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min.
Max.
Unit
VS
Supply Voltage
10
VCL
V
VBOOT
Floating Supply Voltage
-
500
V
VOUT
High Side Switch Source Output
-1
VBOOT -VCL
V
fout
Oscillation Frequency
200
kHz
L6571A - L6571B
2/7



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