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L6918 Datenblatt(PDF) 25 Page - STMicroelectronics |
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L6918 Datenblatt(HTML) 25 Page - STMicroelectronics |
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25 / 35 page ![]() 25/35 L6918 L6918A Power Connections. These are the connections where switching and continuous current flows from the input supply towards the load. The first priority when placing components has to be reserved to this power section, minimizing the length of each connection as much as possible. To minimize noise and voltage spikes (EMI and losses) these interconnections must be a part of a power plane and anyway realized by wide and thick copper traces. The critical components, i.e. the power transistors, must be located as close as possible, together and to the controller. Considering that the "electrical" components re- ported in figure are composed by more than one "physical" component, a ground plane or "star" grounding con- nection is suggested to minimize effects due to multiple connections. Fig. 16a shows the details of the power connections involved and the current loops. The input capacitance (CIN), or at least a portion of the total capacitance needed, has to be placed close to the power section in order to eliminate the stray inductance generated by the copper traces. Low ESR and ESL capacitors are required. Figure 16. Power connections and related connections layout guidelines (same for both phases). Power Connections Related. Fig.16b shows some small signal components placement, and how and where to mix signal and power ground planes. The distance from drivers and mosfet gates should be reduced as much as possible. Propagation delay times as well as for the voltage spikes generated by the distributed inductance along the copper traces are so minimized. In fact, the further the mosfet is from the device, the longer is the interconnecting gate trace and as a consequence, the higher are the voltage spikes corresponding to the gate PWM rising and falling signals. Even if these spikes are clamped by inherent internal diodes, propagation delays, noise and potential causes of instabilities are intro- duced jeopardizing good system behavior. One important consequence is that the switching losses for the high side mosfet are significantly increased. For this reason, it is suggested to have the device oriented with the driver side towards the mosfets and the GATEx and PHASEx traces walking together toward the high side mosfet in order to minimize distance (see fig 17). In addition, since the PHASEx pin is the return path for the high side driver, this pin must be connected directly to the High Side mosfet Source pin to have a proper driving for this mosfet. For the LS mosfets, the return path is the PGND pin: it can be connected directly to the power ground plane (if implemented) or in the same way to the LS mosfets Source pin. GATEx and PHASEx connections (and also PGND when no power ground plane is imple- mented) must also be designed to handle current peaks in excess of 2A (30 mils wide is suggested). VIN LOAD HS Rgate LS Rgate HGATEx PHASEx LGATEx PGNDx CIN COUT L D CBOOTx VIN LOAD HS LS BOOTx PHASEx VCC SGND CIN COUT L D +VCC CVCC a. PCB power and ground planes areas b. PCB small signal components placement |
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