Data Sheet

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DS50004008A - 1

Product Overview

1200V, 40 mΩ typical at VGS = 18V, 49 mΩ typical at VGS = 15V, Silicon Carbide (SiC) N-Channel MOSFET, TO-263

7-lead XL with a source sense.

1 2

3

4

5

6

7

GATE

SOURCE SENSE

SOURCE

DRAIN

(PIN 2)

(FUSED PINS 3, 4, 5, 6, 7)

(BACKSIDE TAB)

(PIN 1)

BACKSIDE

TAB

Table 1. Ordering Information

Catalog Part Number (CPN)

Package

Packing Media (Qty.)

Qualification

MSC040SMB120SDT/R

TO-263 7-lead XL

Tape and Reel (800)

Industrial

MSC040SMB120SDT/RM

Mini Tape and Reel (100)

MSC040SMB120SDT/RVAO

TO-263 7-lead XL

Tape and Reel (800)

AEC-Q101

MSC040SMB120SDT/RMVAO

Mini Tape and Reel (100)

Features

•

Low capacitances and low gate charge

•

Fast switching speed due to low internal gate resistance (ESR)

•

Stable operation at high junction temperature, TJ(max) = 175 °C

•

Fast and reliable body diode

•

Superior avalanche ruggedness (100% UIS production tested)

•

RoHS compliant

Benefits

•

High efficiency to enable lighter and more compact system

•

Simple to drive and easy to parallel

•

Improved thermal capabilities and lower switching losses

•

Eliminates the need for external freewheeling diode

•

Lower system cost of ownership

Applications

•

Photovoltaic (PV) inverter, converter, and industrial motor drives

•

Smart grid transmission and distribution

•

Induction heating and welding

•

Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV)

charger

•

Power supply and distribution

1200V, 40 mΩ N-Channel mSiC™ MOSFET

MSC040SMB120SD