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H30N10HD Datenblatt(PDF) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Teilenummer H30N10HD
Bauteilbeschribung  100V SGT N-Channel MOSFET
PDF  6 Pages
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Hersteller  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H30N10HD Datenblatt(HTML) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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+86-769-22857832
huixin@hx kj.hk
Rev.01
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H30N10HD
100V SGT N-Channel MOSFET
Features:
• Fast switching speed
• 100% avalanche tested
• Improved dv/dt capability
•
Enhanced Avalanche Ruggedness
•
Lead Free
Applications:
•
Synchronous Rectification in SMPS
•
Hard Switching and High Speed Circuit
• Power
Tools
• UPS
•
Motor Control
Ordering Information
Part Number
Package
Marking
Packing
Qty.
H30N10HD
TO-252
H30N10HD
Tape&reel
2500 PCS
Absolute Maximun Ratings (Tc= 2 5℃ unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-to-Source Voltage
100
V
VGS
Gate- to- Source Voltage
±20
V
ID
Continuous Drain Current TC=25℃
30
A
Continuous Drain Current TC=100℃
22
IDM
Pulsed Drain Current
100
PD
Power Dissipation
52
W
EAS
Single Pulse Avalanche Engergy
L = 0.4mH, RG = 25 Ω,TC=25℃
20
mJ
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
℃
Thermal Characteristics
Symbol
Parameter
Typ
Max
Unit
RθJC
Thermal Resistance Junction-Case
--
2.9
℃
/ W
RθJA
Thermal Resistance Junction-Ambient
--
50
℃
/ W
VDSS
RDS(ON)(Typ )
ID
100V
22mΩ
30A


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