H30T65W datasheet(3/8 Pages) HUIXIN

Teilenummer	H30T65W

Bauteilbeschribung	Trench Gate IGBT

PDF	8 Pages

Scroll/Zoom	100%

Hersteller	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

Direct Link	http://www.hxkj.hk

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+86-769-22857832

huixin@hx kj.hk

Rev.01

Page 3 of 9

Symbol

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Switching Characteristics

td(ON)

Turn-on Delay Time

VCE=400V,

IC=30A,

VGE=15V,

Rg=5Ω,

Tj=25°C

Inductive Load

Rise Time

td(OFF)

Turn-Off Delay Time

Fall Time

Eon

Turn-On Switching Loss

0.53

Eoff

Turn-Off Switching Loss

0.48

Ets

Total- Switching Loss

1.01

Total Gate Charge

IC = 30 A,

VGE = 15 V,

VCE =520 V

Gate- to- Emitter Charge

Qgc

Gate-to-Collector Charge

Electrical Characteristics of the DIODE ( TJ= 25℃ unless otherwise specified)

Diode Forward Voltage

2.2

2.9

IF=30A

Trr

Reverse Recovery time

145

IF=15A

di/dt=200A/µs

Irrm

Reverse Recovery Current

4.2

Qrr

Reverse Recovery Charge

326

Trr

Reverse Recovery time

158

IF=30A

di/dt=200A/µs

Irrm

Reverse Recovery Current

4.5

Qrr

Reverse Recovery Charge

374

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