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H285N8HD7 Datenblatt(PDF) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Teilenummer H285N8HD7
Bauteilbeschribung  80V Single N-Channel MOSFET
PDF  6 Pages
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Hersteller  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H285N8HD7 Datenblatt(HTML) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 4 of 6
Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage
Figure 8. Typical Capacitance vs. Drain-to-Source Voltage
Figure 9. Maximum Safe Operating Area
Figure 10. Maximun Drain Current vs. Case Temperature
Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient
0
2
4
6
8
10
0
20
40
60
80
100
120
140
Q
g (nC)
1
10
100
1000
10000
100000
0
20
40
60
80
V
DS (V)
C
iss
C
rss
C
oss
0
50
100
150
200
250
300
350
0
25
50
75
100
125
150
175
T
Ambient(℃)
0.001
0.01
0.1
1
10
1E-05
0.0001
0.001
0.01
0.1
1
single pulse
Duty=T
on/T
Peak T
J=TC+PDM.Z
qJC.RqJC
Duty=0.5
0.3
0.1
0.05
0.03
0.01
Pulse Width (s)
RqJC=0.45℃/W
0.0
0.1
1.0
10.0
100.0
1000.0
0.01
0.1
1
10
100
1000
V
DS (V)
10
ms
10ms
1ms
DC
R
DS(ON) limited
T
J(Max)=175°C
T
C=25°C
100
ms
10s
VDS=40V
ID=20A
Silicon Limited
Package Limited



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