AP4800AGM_07 datasheet(4/5 Pages) A-POWER

Teilenummer	AP4800AGM

Bauteilbeschribung	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Hersteller	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

AP4800AGM

4.5V

QGS

QGD

Charge

Q G , Total Gate Charge (nC)

I D =9 A

V DS =20 V

100

1000

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthia=125 ℃/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.01

0.1

100

0.1

100

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

td(on) tr

td(off) tf

VDS

VGS

10%

90%

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