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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SW040R03 Datenblatt(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW040R03 Datenblatt(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page  Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 1/6 SW040R03VLT Features ⚫ High ruggedness ⚫ Low R DS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7m Ω)@V GS=10V ⚫ Low Gate Charge (Typ 59nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to source voltage 30 V I D Continuous drain current (@T C=25 oC) 100* A Continuous drain current (@T C=100 oC) 83* A I DM Drain current pulsed (note 1) 400 A V GS Gate to source voltage ± 20 V E AS Single pulsed avalanche energy (note 2) 156 mJ E AR Repetitive avalanche energy (note 1) 15 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 100 W Derating factor above 25oC 0.8 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC Thermal characteristics Symbol Parameter Value Unit R thjc Thermal resistance, Junction to case 1.25 oC/W R thja Thermal resistance, Junction to ambient 74 oC/W *. Drain current is limited by junction temperature. 1. Gate 2.Drain 3.Source Order Codes Item Sales Type Marking Package Packaging 1 SW D 040R03VLT SW040R03VLT TO-252 REEL N-channel Enhanced mode TO-252 MOSFET BV DSS : 30V I D : 100A R DS(ON) : 5.1mΩ@VGS=4.5V 3.7m Ω@V GS=10V 1 2 3 TO-252 1 2 3 |
Ähnliche Teilenummer - SW040R03 |
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Ähnliche Beschreibung - SW040R03 |
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