Potens semiconductor corp.

Ver.1.01

2

PDC6902X

60V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

---

---

V

IDSS

Drain-Source Leakage Current

VDS=60V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=48V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=20A

---

3.8

4.6

m



VGS=4.5V , ID=10A

‘---

4.2

5.5

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1

1.6

2.5

V

gfs

Forward Transconductance

VDS=10V , ID=3A

---

25

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3,4

VDS=30V , VGS=4.5V , ID=10A

---

58.2

116

nC

Qgs

Gate-Source Charge3,4

---

16.2

32

Qgd

Gate-Drain Charge3,4

---

23.4

46

Td(on)

Turn-On Delay Time3,4

VDD=30V , VGS=10V , RG=6



ID=1A

---

19.2

40

ns

Tr

Rise Time3,4

---

56.3

120

Td(off)

Turn-Off Delay Time3,4

---

90.8

200

Tf

Fall Time3,4

---

21.6

40

Ciss

Input Capacitance

VDS=25V , VGS=0V , F=1MHz

---

6805

10000

pF

Coss

Output Capacitance

---

445

680

Crss

Reverse Transfer Capacitance

---

195

280

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.3

2.6



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

100

A

ISM

Pulsed Source Current

---

---

200

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=95A., Starting TJ=25℃

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings