Potens semiconductor corp.

Ver.1.00

2

PDC6903Z

60V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250µA

-60

---

---

V

IDSS

Drain-Source Leakage Current

VDS=-60V , VGS=0V , TJ=25℃

---

---

-1

µA

VDS=-48V , VGS=0V , TJ=125℃

---

---

-10

µA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-15A

---

24

28

m



VGS=-4.5V , ID=-10A

---

29

38

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250µA

-1.2

-1.6

-2.5

V

Dynamic and switching Characteristics3

Qg

Total Gate Charge

VDS=-30V , VGS=-10V , ID=-15A

---

43.8

66

nC

Qgs

Gate-Source Charge

---

4.6

7

Qgd

Gate-Drain Charge

---

8.3

13

Td(on)

Turn-On Delay Time

VDD=-30V , VGS=-10V , RG=6



ID=-15A

---

25

38

ns

Tr

Rise Time

---

13.8

21

Td(off)

Turn-Off Delay Time

---

148

222

Tf

Fall Time

---

51

77

Ciss

Input Capacitance

VDS=-30V , VGS=0V , F=1MHz

---

2595

3893

pF

Coss

Output Capacitance

---

162

243

Crss

Reverse Transfer Capacitance

---

115

173

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

8

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-30

A

ISM

Pulsed Source Current

---

---

-60

A

VSD

Diode Forward Voltage

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

trr

Reverse Recovery Time

VR=-50V, IS=-10A

di/dt=100A/µs, TJ=25℃

---

40

---

ns

Qrr

Reverse Recovery Charge

---

30

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=-25V,VGS=-10V,L=0.1mH,IAS=-46A.,Starting TJ=25℃

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings