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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IXTP2R4N120P Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTP2R4N120P Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1385 eq IXTP2R4N120P N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 2.4A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.5Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · AC and DC Motor Drives · DC-DC Converters Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 2.4 A IDM Drain Current-Single Pulse 6 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W 3 2 1 |
Ähnliche Teilenummer - IXTP2R4N120P |
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Ähnliche Beschreibung - IXTP2R4N120P |
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