LET9006 datasheet(1/4 Pages) STMICROELECTRONICS

Teilenummer	LET9006

Bauteilbeschribung	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

PDF	4 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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TARGET DATA

April, 15 2003

LET9006

RF POWER TRANSISTORS

Ldmos Enhanced Technology in Plastic Package

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 6 W with 17 dB gain @ 960 MHz / 26V

• NEW LEADLESS PLASTIC PACKAGE

• ESD PROTECTION

• SUPPLIED IN TAPE & REEL OF 3K UNITS

DESCRIPTION

The LET9006 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 26 V in common source mode at frequencies up

to 1 GHz. LET9006 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the innovative leadless

SMD plastic package, PowerFLAT™.

It is ideal for digital cellular BTS

applications

requiring high linearity.

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

1

A

PDISS

Power Dissipation (@ Tc = 70°C)

16

W

Tj

Max. Operating Junction Temperature

150

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

5

°C/W

ORDER CODE

LET9006

BRANDING

9006

PowerFLAT

™(5x5)

PIN CONNECTION

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