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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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MBR200100CTS Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR200100CTS Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISSM5015 eq MBR200100CTS D Schottky Rectifier Diode www.iscsemi.com 1 DESCRIPTION ·High Surge Capability · Isolation Type Package · Electrically Isolated Base Plate APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VRRM Max. repetitive reverse blocking voltage,TVJ=25℃ 100 V VRMS Maximum RMS Voltage 70 V IFAV Forward voltage drop Per diodeTC=110℃ 200 A TJ Junction Temperature -40~175 ℃ Tstg Storage Temperature Range -40~175 ℃ ELECTRICAL CHARACTERISTICS SYMBO L PARAMETER CONDITIONS MIN TYP MAX UNIT VF Forward Voltage drop IF=100A; TC=25℃ -- -- 0.95 V IF=100A; TC=125℃ -- 0.8 -- IR Reverse current VR=80V;TJ=25℃ -- -- 10 uA VR=80V;TJ=125℃ -- -- 5 mA SOT-227 package 1 2 3 4 |
Ähnliche Teilenummer - MBR200100CTS |
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Ähnliche Beschreibung - MBR200100CTS |
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