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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1812 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1812 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon PNP Power Transistor 2SA1812 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -1.0V(Max) @IC= -0.1A APPLICATIONS · High-voltage Switching Transistor · Telephone power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -0.5 A ICP Collector Current-Pulse -1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Ähnliche Teilenummer - 2SA1812 |
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Ähnliche Beschreibung - 2SA1812 |
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