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MBR10H45 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR10H45 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Schottky Rectifier MBR10H45 www.iscsemi.com 1 FEATURES · Lower Power Losses, High Efficiency · Low Forward Voltage Drop · High Forward Surge Capability · High Frequency Operation APPLICATIONS · Switching Mode Power Supply · Freewheeling Diode · DC-DC Converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Maximum repetitive peak reverse voltage 45 V IF(AV) Average Rectified Forward Current 10 A IFSM Nonrepetitive Peak Surge Current 150 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃ /W |
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