AP1N02AF

20V N-Channel Enhancement Mode MOSFET

AP1N02AF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

20

23

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V,

-

-

1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±10V

-

-

±10

uA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

0.5

0.7

1.2

V

RDS(on)

Static Drain-Source on-Resistance note2

VGS=4.5V, ID=0.5A

-

135

250

mΩ

VGS=2.5V, ID=0.4A

-

195

280

Ciss

Input Capacitance

VDS=10V, VGS=0V,

f=1.0MHz

-

60

-

pF

Coss

Output Capacitance

-

22

-

pF

Crss

Reverse Transfer Capacitance

-

12

-

pF

Qg

Total Gate Charge

VDS=10V, ID=0.9A,

VGS=4.5V

-

1

-

nC

Qgs

Gate-Source Charge

-

0.28

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

0.22

-

nC

td(on)

Turn-on Delay Time

VDS=10V,

ID=0.5A, RGEN=10Ω,

VGS=4.5V

-

2

-

ns

tr

Turn-on Rise Time

-

19

-

ns

td(off)

Turn-off Delay Time

-

10

-

ns

tf

Turn-off Fall Time

-

23

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

0.9

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

3.6

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=0.9A

-

-

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.