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AP2N150MP Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS

Teilenummer AP2N150MP
Bauteilbeschribung  1500V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Hersteller  APME [A POWER MICROELECTRONICS]
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AP2N150MP
1500V N-Channel Enhancement Mode MOSFET
AP2N150MP RVE1.0
永源微電子科技有限公司
Description
The AP2N150MP is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 1500V ID =2.0A
RDS(ON) < 13Ω @ VGS=10V （Type：11.5Ω）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP2N150MP
TO-247-3L
AP2N150MP XXX YYYY
330
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Units
VDSS
Drain-Source Voltage
1500
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25
℃
Drain Current, VGS @ 10V
2.0
A
ID@TC=100
℃
Drain Current, VGS @ 10V
1.1
A
IDM
Drain Current - Pulsed
8
A
EAS
Single Pulsed Avalanche Energy
88.2
mJ
IAR
Avalanche Current
4.2
A
EAR
Repetitive Avalanche Energy
0.35
mJ
PD
Power Dissipation
290.7
W
Tj ,Tstg
Operating and Storage Temperature Range
-55 to +150
°C
RθJC
Thermal Resistance, Junction-to-Case
3.47
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
40
°C/W


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