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AP3N04AI Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS

Teilenummer AP3N04AI
Bauteilbeschribung  40V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Hersteller  APME [A POWER MICROELECTRONICS]
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AP3N04AI
40V N-Channel Enhancement Mode MOSFET
AP3N04AI RVE1.0
永源微電子科技有限公司
Description
The AP3N04AI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =3A
RDS(ON) < 40mΩ @ VGS=10V （Type：28mΩ）
Application
Wireless charging
Boost driver
LED
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP3N04AI
SOT23L
3N04A-AP
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
3
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
2.9
A
IDM
Pulsed Drain Current2
15
A
EAS
Single Pulse Avalanche Energy3
16.2
mJ
PD@TA=25℃
Total Power Dissipation4
1.67
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
125
℃
/W
RθJC
Thermal Resistance Junction-Case1
30
℃
/W


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