AP10H04DF datasheet(1/7 Pages) APME

Teilenummer	AP10H04DF

Bauteilbeschribung	40V NN-Channel Enhancement Mode MOSFET

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AP10H04DF

40V N+N-Channel Enhancement Mode MOSFET

Description

The AP10H04DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V.

This device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 40V ID =12.5A

RDS(ON) < 8.5mΩ @ VGS=10V

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP10H04DF

PDFN3*3-8L

AP10H04DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current1

12.5

A

ID@TC=100℃

Continuous Drain Current1

8.5

A

IDM

Pulsed Drain Current2

60

A

EAS

Single Pulse Avalanche Energy3

48

mJ

IAS

Avalanche Current

31

A

PD@TC=25℃

Total Power Dissipation4

27.8

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient (Steady State)1

60

℃/W

RθJC

Thermal Resistance Junction-Case1

4.5

℃/W

AP10H04DF RVE1.0

永源微電子科技有限公司

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