AP10P04MI datasheet(1/7 Pages) APME

Teilenummer	AP10P04MI

Bauteilbeschribung	-40V P-Channel Enhancement Mode MOSFET

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Hersteller	APME [A POWER MICROELECTRONICS]

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AP10P04MI

-40V P-Channel Enhancement Mode MOSFET

AP10P04MI REV1.0

永源微電子科技有限公司

Description

The AP10P04MI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

=device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -40V ID =-10A

RDS(ON) < 35mΩ @ VGS=-10V （Type：27mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP10P04MI

SOT23-3L

10P04M AP

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, -VGS @ -10V1

-10

A

ID@TC=100

℃

Continuous Drain Current, -VGS @ -10V1

-5.8

A

IDM

Pulsed Drain Current2

-40

A

EAS

Single Pulse Avalanche Energy3

109

mJ

IAS

Avalanche Current

-30

A

PD@TC=25

℃

Total Power Dissipation4

35

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃/W

RθJC

Thermal Resistance Junction-Case1

3.6

℃/W

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