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AP20G04GD Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS

Teilenummer AP20G04GD
Bauteilbeschribung  40V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Hersteller  APME [A POWER MICROELECTRONICS]
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AP20G04GD
40V N+P-Channel Enhancement Mode MOSFET
AP20G04GD REV1.1
永源微電子科技有限公司
Description
The AP20G04GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =20A
RDS(ON) < 20mΩ @ VGS=10V （Type：15mΩ）
VDS = -40V ID =-18A
RDS(ON) < 36mΩ @ VGS=-10V （Type：32mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20G04GD
TO-252-4L
AP20G04GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Ch
P-Ch
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
22
21
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
15
-16
A
IDM
Pulsed Drain Current2
65
-60
A
EAS
Single Pulse Avalanche Energy3
158
152
mJ
PD@TA=25℃
Total Power Dissipation4
10
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
5
℃
/W


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