AP20N03D

30V N-Channel Enhancement Mode MOSFET

AP20N03D Rve3.9

臺灣永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

32

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.023

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=10A

---

15.6

25

mΩ

VGS=4.5V , ID=8A

---

28.5

38

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-4.2

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=24V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=10A

---

5.5

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

2.3

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=10A

---

4.9

---

nC

Qgs

Gate-Source Charge

---

1.66

---

Qgd

Gate-Drain Charge

---

1.85

---

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V , RG=3.3

ID=10A

---

1.6

---

ns

Tr

Rise Time

---

15.8

---

Td(off)

Turn-Off Delay Time

---

13

---

Tf

Fall Time

---

4.8

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

216

---

pF

Coss

Output Capacitance

---

62

---

Crss

Reverse Transfer Capacitance

---

51

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

24

A

ISM

Pulsed Source Current2,5

---

---

50

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=10A , dI/dt=100A/µs ,

TJ=25

℃

---

8.7

---

nS

Qrr

Reverse Recovery Charge

---

1.95

---

nC

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.