AP20N06DF

60V N-Channel Enhancement Mode MOSFET

AP20N06DF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250mA, VGS = 0V

60

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 60V, VGS = 0V

-

-

1.0

mA

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250mA

1.2

1.6

2.5

V

RDS(ON)

Static Drain-Source ON-

Resistance(4)

VGS = 10V, ID = 10A

-

30

35

mΩ

VGS = 4.5V, ID = 5A

-

32

45

mΩ

Rg

Gate Resistance

f = 1MHz

-

1.4

-

Ω

Ciss

Input Capacitance

VGS = 0V, VDS = 30V, f =

1MHz

-

1187

-

pF

Coss

Output Capacitance

-

56

-

pF

Crss

Reverse Transfer Capacitance

-

47

-

pF

Qg

Total Gate Charge

VGS = 0 to 10V

VDS = 30V, ID = 10A

-

24

-

nC

Qgs

Gate Source Charge

-

4.5

-

nC

Qgd

Gate Drain("Miller") Charge

-

4.5

-

nC

td(on)

Turn-On DelayTime

VGS = 10V, VDD = 30V

ID= 10A, RGEN = 3Ω

-

6.7

-

ns

tr

Turn-On Rise Time

-

15

-

ns

td(off)

Turn-Off DelayTime

-

24

-

ns

tf

Turn-Off Fall Time

-

2.7

-

ns

IS

Maximum Continuous Body Diode Forward Current

-

-

28

A

ISM

Maximum Pulsed Body Diode Forward Current

-

-

79

A

VSD

Body Diode Forward Voltage

VGS = 0V, IS = 10A

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF = 10A,

di/dt = 100A/us

13

19

25

ns

Qrr

Body Diode Reverse Recovery

Charge

-

19

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is TJ =25℃, VDD =48V, VG =10V, RG =25Ω, L=0.1mH, IAS =13A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.