AP20N10DF datasheet(1/7 Pages) APME

Teilenummer	AP20N10DF

Bauteilbeschribung	100V N-Channel Enhancement Mode MOSFET

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Hersteller	APME [A POWER MICROELECTRONICS]

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AP20N10DF

100V N-Channel Enhancement Mode MOSFET

AP20N10DF REV1.0

永源微電子科技有限公司

Description

The AP20N10DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =20A

RDS(ON) < 85mΩ@ VGS=10V （Type：68mΩ）

Application

Automative lighting

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20N10DF

PDFN3X3-8L

AP20N10DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Drain Current, VGS @ 10V

20

A

ID@TC=100℃

Drain Current, VGS @ 10V

10

A

IDM

Pulsed Drain Current1

58

A

EAS

Single Pulse Avalanche Energy3

72

mJ

IAS

Avalanche Current

11

A

PD@TC=25℃

Total Power Dissipation

41.7

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

62.5

℃/W

RθJC

Maximum Thermal Resistance, Junction-case

3

℃/W

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