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AP40P03DF Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS

Teilenummer AP40P03DF
Bauteilbeschribung  -30V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Hersteller  APME [A POWER MICROELECTRONICS]
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AP40P03DF Datenblatt(HTML) 1 Page - A POWER MICROELECTRONICS

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AP40P03DF
-30V P-Channel Enhancement Mode MOSFET
AP40P03DF RVE1.1
永源微電子科技有限公司
Description
The AP40P03DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -30V ID =-40A
RDS(ON) <16mΩ @ VGS=-10V （Type：10.5mΩ）
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP40P03DF
PDFN3*3-8L
AP40P03DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ -10V1
-40
A
ID@TA=70℃
Continuous Drain Current, VGS @ -10V1
-23
A
IDM
Pulsed Drain Current2
-120
A
EAS
Single Pulse Avalanche Energy3
68
mJ
IAS
Avalanche Current
-29.4
A
PD@TA=25℃
Total Power Dissipation4
3.1
W
PD@TA=70℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
75
℃
/W
RθJA
Thermal Resistance Junction-Ambient 1(t≦ 10s)
40
℃
/W
RθJC
Thermal Resistance Junction-Case1
24
℃
/W


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