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AP40P04NF Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS

Teilenummer AP40P04NF
Bauteilbeschribung  -40V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Hersteller  APME [A POWER MICROELECTRONICS]
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AP40P04NF Datenblatt(HTML) 1 Page - A POWER MICROELECTRONICS

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AP40P04NF
-40V P-Channel Enhancement Mode MOSFET
AP40P04NF RVE1.0
永源微電子科技有限公司
Description
The AP40P04NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -40V ID =-40 A
RDS(ON) < 18mΩ @ VGS=-10V (Type：15mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP40P04NF
PDFN5*6-8L
AP40P04NF XXX YYYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ -10V1
-40
A
ID@TC=100℃
Continuous Drain Current, VGS @ -10V1
-23
A
IDM
Pulsed Drain Current2
-120
A
EAS
Single Pulse Avalanche Energy3
125
mJ
PD@TC=25℃
Total Power Dissipation4
25
W
PD@TA=25℃
Total Power Dissipation4
16
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25
℃
/W
RθJC
Thermal Resistance Junction-Case1
5
℃
/W


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