AP70N20CF datasheet(1/7 Pages) APME

Teilenummer	AP70N20CF

Bauteilbeschribung	200V N-Channel Enhancement Mode MOSFET

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Hersteller	APME [A POWER MICROELECTRONICS]

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AP70N20CFIPIT

200V N-Channel Enhancement Mode MOSFET

AP70N20CF/P/T REV1.1

永源微電子科技有限公司

Description

The AP70N20CF/P/T is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 200V ID =70A

RDS(ON) < 48mΩ @ VGS=10V （Type：38mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP70N20CF

TO220F-3L

AP70N20CF XXX YYYY

1000

AP70N20CP

TO220-3L

AP70N20CP XXX YYYY

1000

AP70N20CT

TO263-3L

AP70N20CT XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

200

V

ID

Continuous Drain Current

70

A

IDM

Pulsed Drain Current

(note1)

240

A

VGS

Gate-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy (note2)

1700

mJ

IAR

Avalanche Current (note1)

20

A

EAR

Repetitive Avalanche Energy note1)

18

mJ

PD

Power Dissipation (TC = 25ºC)

250

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+175

ºC

RthJC

Thermal Resistance, Junction-to-Case

0.5

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

40

ºC/W

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