ST2S06B datasheet(9/21 Pages) STMICROELECTRONICS

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ST2S06A33 - ST2S06B - ST2S06D33

Electrical characteristics

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Table 9.

Electrical characteristics for ST2S06B (VIN_SW = VIN_A = 5 V, VO1,2 =1.2 V, C1= 4.7 µF,

C2 = C3 = 22 µF, L1 = L2 = 3.3 µH, TJ = -30 to 125 °C unless otherwise specified. Typical

values are referred to 25 °C

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

FB1,2

Feedback voltage

784

800

816

IFB1,2

VFB pin bias current

VFB = 1 V

600

Quiescent current

VINH > 1.2 V, VFB = 1 V

VINH < 0.4 V

µA

IO1,2

Output current

VIN = 2.5 to 5.5 V

(1)

0.8

IMIN

Minimum output current

VINH

Inhibit threshold

2.5V < VIN < 5 V

1.2

2.5V < VIN < 5.5 V

1.3

Device OFF

0.4

IINH1,2

Inhibit pin current

µA

%VO1,2/

ΔVIN

Reference line regulation

2.5V < VIN < 5.5 V

0.032

%VO/

VIN

ΔVO1,2

Reference load regulation

10 mA < IO < 0.5 A

5.5

PWM fS

PWM switching

frequency(1)

VFB = 0.7 V, TA = 25°C

1.2

1.5

1.8

MHz

DMAX

Maximum duty cycle

VFB = 0.7 V, TA = 25°C

ISWL

Switching current limitation

1.2

ILKN

NMOS leakage current

VFB = 0.9 V, TA = 25°C

0.1

µA

ILKP

PMOS leakage current

VFB = 0.9 V, TA = 25°C

0.1

µA

RDSon-N

NMOS switch on resistance ISW = 250 mA

0.15

0.3

RDSon-P

PMOS switch on resistance ISW = 250 mA

0.2

0.4

Efficiency

IO = 20 mA to 100 mA

IO = 100 mA to 0.5 A

TSHDN

Thermal shut down (2)

130

150

°C

THYS

Thermal shut down

hysteresis (1)

°C

ΔVO1,2/ΔIO Load transient response (1)

100 mA < IO < 500 mA,

tR = tF1 => 100 ns, TA = 25°C

-5

%VO

VO= 90% of nominal value.

Guaranteed by design, but not tested in production.

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