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AP100N07P Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS

Teilenummer AP100N07P
Bauteilbeschribung  68V N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Hersteller  APME [A POWER MICROELECTRONICS]
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AP100N07P Datenblatt(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N07PIT
68V N-Channel Enhancement Mode MOSFET
AP100N07P/T REV1.0
永源微電子科技有限公司
Description
The AP100N07P/T uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 68V ID =100A
RDS(ON) < 6.8mΩ @ VGS=10V （Type：5.8mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N07P
TO-220-3L
AP100N07P XXX YYYY
1000
AP100N07T
TO-263-3L
AP100N07T XXX YYYY
800
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
68
V
VGS
Gate source voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
100
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
53
A
IDM
Pulsed drain current2)
360
A
IAS
Diode forward current
29
A
PD
Power dissipation
123
W
EAS
Single pulsed avalanche energy)
206
mJ
Tstg
，Tj
Operation and storage temperature
-55 to 150
℃
RθJC
Thermal resistance, junction-case
1.0
℃/W
RθJA
Thermal resistance, junction-ambient4)
62.5
℃/W


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