AP90N03DF datasheet(1/7 Pages) APME

Teilenummer	AP90N03DF

Bauteilbeschribung	30V N-Channel Enhancement Mode MOSFET

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Hersteller	APME [A POWER MICROELECTRONICS]

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AP90N03DF

30V N-Channel Enhancement Mode MOSFET

AP90N03DF REV1.0

永源微電子科技有限公司

Description

The AP90N03DF uses advanced APM-SGT V technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =90A

RDS(ON) < 1.65mΩ @ VGS=10V （Type：1.28mΩ）

Application

Boost driver

Brushless motor

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP90N03DF

PDFN3*3-8L

AP90N03DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

85

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

80

A

IDM

Pulsed Drain Current2

600

A

EAS

Single Pulse Avalanche Energy3

180

mJ

IAS

Avalanche Current

54

A

PD@TC=25℃

Total Power Dissipation4

66

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

1.7

℃

/W

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