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AP110N30MP Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP110N30MP Datenblatt(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP110N30MP 300V N-Channel Enhancement Mode MOSFET AP110N30MP REV1.0 永源微電子科技有限公司 Description The AP110N30MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 300V ID =110A RDS(ON) < 39mΩ @ VGS=10V (Type:30mΩ) Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP110N30MP TO-247-3L AP110N30MP XXX YYYY 300 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage (VGS = 0V) 300 V ID@TC=25 ℃ Continuous Drain Current 110 A ID@TC=100 ℃ Continuous Drain Current 85 A IDM Pulsed Drain Current 450 A VGSS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 3000 mJ IAS Avalanche Current 80 A EAR Repetitive Avalanche Energy 525 mJ PD Power Dissipation (TC = 25ºC) 800 W TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 ºC RthJC Thermal Resistance, Junction-to-Case 0.15 ºC/W RthJA Thermal Resistance, Junction-to-Ambient 40 ºC/W |
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Ähnliche Beschreibung - AP110N30MP |
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