| Datenblatt-Suchmaschine für elektronische Bauteile |
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HAT1069C Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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HAT1069C Datenblatt(HTML) 4 Page - Renesas Technology Corp |
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4 / 6 page ![]() HAT1069C R07DS1169EJ0400 Rev.4.00 Page 4 of 5 Mar 19, 2014 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current –25 25 075 50 100 125 150 20 40 60 80 100 120 VGS = –4.5 V –3 –0.1 –1 –10 –0.3 10 100 1 0.1 Tc = –25 °C VDS = –10 V 75 °C 25 °C Pulse Test Pulse Test ID = –4 A, –1.5 A, –1 A –1 A –1.5 A –4 A –2.5 V –1.8 V Drain Current ID (A) Switching Characteristics 1000 100 10 –1 –100 –10 –0.1 tf tr td(off) td(on) VGS = –4.5 V, VDD = –10 V Source to Drain Voltage VSD (V) –12 –16 –8 –4 0 –0.4 –0.8 –1.2 –1.6 –2.0 Reverse Drain Current vs. Source to Drain Voltage Ta = 25 °C –5 V VGS = 0, 5 V Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 0–4 –2 –8 –10 –6 –12 10000 1000 100 10 Ciss Coss Crss VGS = 0 f = 1 MHz –16 –8 0 0 10 20 –8 –4 0 ID = –3 A Gate Charge Qg (nc) Dynamic Input Characteristics VDD = –10, –12 V –7 V –5 V Pulse Test VDD = –12 V –10 V –5 V –7 V –1 A –4 A –1.5 A |
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