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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IXTY18P10T Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTY18P10T Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc P-Channel MOSFET Transistor IXTY18P10T www.iscsemi.com 1 FEATURES · Drain Current -ID= -18A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.12Ω(Max)@VGS= -10V DESCRIPTION · DC Choppers · Current Regulators · Battery Charger Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 15 V ID Drain Current-Continuous -18 A IDM Drain Current-Single Pulse -60 A PD Total Dissipation 83 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃ /W |
Ähnliche Teilenummer - IXTY18P10T |
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Ähnliche Beschreibung - IXTY18P10T |
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