| Datenblatt-Suchmaschine für elektronische Bauteile |
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STPS1L30MF Datenblatt(PDF) 4 Page - STMicroelectronics |
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STPS1L30MF Datenblatt(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics STPS1L30MF 4/7 Figure 7. Reverse leakage currrent versus reverse voltage applied (typical values) Figure 8. Reverse leakage currrent versus junction temperature (typical values) Figure 9. Junction capacitance versus reverse voltage applied (typical values) Figure 10. Forward voltage drop versus forward current Figure 11. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu=35 µm, typical values) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 2 4 6 8 1012141618202224262830 I (mA) R V (V) R T =125°C j T =150°C j T =100°C j T =50°C j T =25°C j T =75°C j 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 25 50 75 100 125 150 I (mA) R T (°C) j V =30V R 10 100 1000 1 10 100 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 I (A) FM V (V) FM T =25°C (maximum values) j T =85°C (maximum values) j T =85°C (typical values) j 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 180 200 R (°C/W) th(j-a) S(mm²) |
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