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FFSP3065B Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer FFSP3065B
Bauteilbeschribung  Silicon Carbide Schottky Diode
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FFSP3065B Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCD7080
eq
FFSP3065B
Silicon Carbide Schottky Diode
www.iscsemi.com
1
FEATURES
· Ease of Paralleling
· Positive Temperature Coefficient
· High Surge Current Capacity
APPLICATIONS
· SMPS
· General Purpose
· Power Switching Circuit
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitisve Peak Reverse Voltage
650
V
IF
Continuous ForwardCurrent
Tc=25℃
80
A
Tc=150℃
30
IFSM
Non-Repetitive Forward Surge
Current
Half−Sine Pulse,tp = 10 ms
234
A
Ptot
Power Dissipation
Tc=25℃
310
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
TYP
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.48
℃
/W


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